DocumentCode :
3357100
Title :
1.2V low-power four-quadrant CMOS transconductance multiplier operating in saturation region
Author :
Szczepanski, S. ; Koziel, S.
Author_Institution :
Fac. of Electron., Telecommun. & Inf., Gdansk Univ. of Technol., Poland
Volume :
1
fYear :
2004
fDate :
23-26 May 2004
Abstract :
The paper describes a simple CMOS technique for realizing a linear, low-voltage, low-power, four-quadrant transconductance multiplier based on MOS transistors working in saturation region. The proposed circuit has been developed and simulated using standard 0.35μm AMS process. SPICE simulations show that the total harmonic distortion (THD) at 0.3Vpp@1MHz applied to Y input is -70.5dB with 0.1V DC voltage applied to X input. Input referred noise equals 0.6μV/Hz12/ which results in the dynamic range of the circuit equal to 52dB. Power consumption is 0.05mW from a single 1.2V supply. An example of application the CMOS multiplier as a modulator is presented.
Keywords :
CMOS analogue integrated circuits; MOSFET; analogue multipliers; low-power electronics; 0.05 mW; 0.1 V; 0.35 micron; 1 MHz; 1.2 V; AMS process; CMOS technique; MOS transistors; SPICE simulations; four-quadrant CMOS transconductance multiplier; input referred noise; saturation region; total harmonic distortion; CMOS technology; Circuit noise; Circuit simulation; Dynamic range; MOSFETs; SPICE; Standards development; Total harmonic distortion; Transconductance; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 2004. ISCAS '04. Proceedings of the 2004 International Symposium on
Print_ISBN :
0-7803-8251-X
Type :
conf
DOI :
10.1109/ISCAS.2004.1328370
Filename :
1328370
Link To Document :
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