Laser scanning for sensing and study the operation of semiconductor devices

Author

Litvinenko, S.V. ; Ilchenko, L.M. ; Kolenov, S.O. ; Smirnov, E.M. ; Molochko, P.V. ; Skryshevsky, V.A.

Author_Institution

Kiev Taras Shevchenko Univ., Kiev

fYear

2008

fDate

Sept. 29 2008-Oct. 4 2008

Firstpage

441

Lastpage

443

Abstract

Advanced scanning technique on the base of laser microscope and evaluation of the induced photovoltaic (PV) signal is discussed. It is able to obtain non-destructively the 2D distribution of the several important parameters of semiconductor PV devices such as surface potential, sheet resistance, efficiency and losses of energy conversion, nanosize deviations of their layers.

Keywords

measurement by laser beam; photovoltaic cells; semiconductor device measurement; PV induced signal 2D distribution; advanced laser scanning technique; energy conversion losses; laser beam scanning diagnostics; laser microscope; nanosize deviation; photovoltaic signal evaluation; semiconductor PV device operation; sheet resistance; surface potential; Laser beams; Lighting; Photovoltaic cells; Photovoltaic systems; Semiconductor devices; Semiconductor lasers; Solar power generation; Surface emitting lasers; Surface resistance; Voltage; 2D distribution; acoustic-optics deflector; laser scanning; photovoltaic device;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Optoelectronics and Lasers, 2008. CAOL 2008. 4th International Conference on

Conference_Location

Crimea

Print_ISBN

978-1-4244-1973-9

Electronic_ISBN

978-1-4244-1974-6

Type

conf

DOI

10.1109/CAOL.2008.4671918

Filename

4671918