DocumentCode :
3357204
Title :
Laser scanning for sensing and study the operation of semiconductor devices
Author :
Litvinenko, S.V. ; Ilchenko, L.M. ; Kolenov, S.O. ; Smirnov, E.M. ; Molochko, P.V. ; Skryshevsky, V.A.
Author_Institution :
Kiev Taras Shevchenko Univ., Kiev
fYear :
2008
fDate :
Sept. 29 2008-Oct. 4 2008
Firstpage :
441
Lastpage :
443
Abstract :
Advanced scanning technique on the base of laser microscope and evaluation of the induced photovoltaic (PV) signal is discussed. It is able to obtain non-destructively the 2D distribution of the several important parameters of semiconductor PV devices such as surface potential, sheet resistance, efficiency and losses of energy conversion, nanosize deviations of their layers.
Keywords :
measurement by laser beam; photovoltaic cells; semiconductor device measurement; PV induced signal 2D distribution; advanced laser scanning technique; energy conversion losses; laser beam scanning diagnostics; laser microscope; nanosize deviation; photovoltaic signal evaluation; semiconductor PV device operation; sheet resistance; surface potential; Laser beams; Lighting; Photovoltaic cells; Photovoltaic systems; Semiconductor devices; Semiconductor lasers; Solar power generation; Surface emitting lasers; Surface resistance; Voltage; 2D distribution; acoustic-optics deflector; laser scanning; photovoltaic device;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Optoelectronics and Lasers, 2008. CAOL 2008. 4th International Conference on
Conference_Location :
Crimea
Print_ISBN :
978-1-4244-1973-9
Electronic_ISBN :
978-1-4244-1974-6
Type :
conf
DOI :
10.1109/CAOL.2008.4671918
Filename :
4671918
Link To Document :
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