DocumentCode
3357265
Title
Effective mobility in heavily doped n-MOSFETs: measurements and models
Author
Villa, S. ; Lacaita, A.L. ; Perron, L. ; Bez, R.
Author_Institution
Politecnico di Milano, Italy
fYear
1996
fDate
8-11 Dec. 1996
Firstpage
395
Lastpage
398
Abstract
A careful modeling of electron mobility in ULSI-MOSFETs must account for the strong two-dimensionality of the electron gas and the effect of charge trapping on the measurements. We propose a new analytical mobility model suitable for implementation in device simulation codes. The model parameters have been tailored to experimental data over a wide temperature, channel doping and bias range.
Keywords
MOS integrated circuits; MOSFET; ULSI; electron mobility; heavily doped semiconductors; semiconductor device models; semiconductor doping; two-dimensional electron gas; ULSI-MOSFETs; analytical mobility model; bias range; channel doping; charge trapping; device simulation codes; effective mobility; electron gas two-dimensionality; electron mobility; heavily doped n-MOSFETs; model parameters; Acoustic scattering; Analytical models; Charge measurement; Current measurement; Doping; Electron mobility; Electron traps; MOSFET circuits; Phonons; Semiconductor process modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-3393-4
Type
conf
DOI
10.1109/IEDM.1996.553611
Filename
553611
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