Energy and emission spectra of the Ga1−xInxAsySb1−y/AlxGa1−xAsySb1−y multiple-quantum-well heterostructures

Author

Manak, I.S. ; Ushakov, D.V. ; Bialiausky, U.S.

Author_Institution

Belarussian State Univ., Minsk

fYear

2008

fDate

Sept. 29 2008-Oct. 4 2008

Firstpage

285

Lastpage

287

Abstract

For asymmetric multiple-quantum-well heterostructures based on Ga_1-xIn_xAs_ySb_1-y/Al_xGa_1-xAs_ySb_1-y semiconductors it is shown that a wide and almost flat waveguide gain spectrum can be obtained over the 2.3-2.84 mum spectral range. Main attention is devoted to the results obtained under study of spectral characteristics of two- and four- quantum-well structures with active region layers of different widths. Numerical simulation for band diagrams of the active region and emission spectra are performed.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; photoluminescence; semiconductor quantum wells; Ga_1-xIn_xAs_ySb_1-y-Al_xGa_1-xAs_ySb_1-y; asymmetric multiple-quantum-well heterostructures; band diagrams; emission spectra; flat waveguide gain spectrum; semiconductors; Charge carrier processes; Effective mass; Electron emission; Iron; Magnetic resonance imaging; Optical waveguides; Photonic band gap; Quantum well devices; Semiconductor waveguides; Stimulated emission; inhomogeneous excitation; multiple-quantum-wells; wide waveguide gain spectra;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Optoelectronics and Lasers, 2008. CAOL 2008. 4th International Conference on

Conference_Location

Crimea

Print_ISBN

978-1-4244-1973-9

Electronic_ISBN

978-1-4244-1974-6

Type

conf

DOI

10.1109/CAOL.2008.4671923

Filename

4671923