Investigation of quantum effects in highly-doped MOSFETs by means of a self-consistent 2D model

We report on a self-consistent two-dimensional model for the analysis of quantum-mechanical effects in heavily doped MOSFETs. Self-consistency between the Schrodinger and the Poisson/continuity equations is achieved by an iterative procedure based on the concept of a locally modified effective intrinsic density. Our implementation provides a natural smooth transition between the quantum and classical regimes and allows for an advantageous trade-off between computational efficiency and physical accuracy. Insight into the charge and current distribution, and a rigorous evaluation of the device I-V characteristic can be achieved. Good agreement with experimental data is obtained over a wide range of channel doping concentrations.