Title :
CdTe diode detectors with a p-n junction formed by laser-induced doping
Author :
Gnatyuk, V.A. ; Aoki, T. ; Vlasenko, O.I. ; Levytskyi, S.N.
Author_Institution :
Res. Inst. of Electron., Shizuoka Univ., Hamamatsu, Japan
Abstract :
The procedures of fabrication of X- and γ-ray CdTe-based diode detectors with a p-n junction formed by laser-induced doping of the surface region of high resistivity p-like crystals in different environments are considered. The use of a relatively thick In dopant film and laser irradiation of In/CdTe structure in liquid allowed to apply higher laser energy densities and multiple irradiation of an In film. Finally, the room temperature In/CdTe/Au diode detectors with extremely high energy resolution have been obtained.
Keywords :
X-ray detection; gamma-ray detection; laser materials processing; p-n junctions; semiconductor counters; semiconductor diodes; semiconductor doping; CdTe diode detectors; In-CdTe-Au diode detectors; X-ray CdTe based diode detectors; detector fabrication; gamma-ray CdTe based diode detectors; high resistivity p like crystals; indium dopant film; indium doped CdTe detectors; laser induced doping; p-n junction; semiconductor surface region; Atom lasers; Atomic beams; Atomic measurements; Conferences; Crystals; Measurement by laser beam;
Conference_Titel :
Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2011 IEEE
Conference_Location :
Valencia
Print_ISBN :
978-1-4673-0118-3
DOI :
10.1109/NSSMIC.2011.6154699
