Development of spectroscopic imaging arrays using epitaxially grown thick single crystal CdTe layers on Si substrates

We present the design and fabrication of a 2D monolithic pixel type detector array using vapor-phase grown thick CdTe epitaxial layers on Si substrates. Each pixel in the array consists of a p-CdTe/n-CdTe/n⁺-Si heterojunction diode structure, and pixels were patterned by cutting deep vertical trenches using a dicing saw. We also developed a low-temperature epoxy based bonding technique to bond the array to the read out electronic chip. Preliminary evaluation shows fabricated array is capable for spectroscopic imaging application, and this fabrication technique is useful in developing larger imaging arrays.