Extremely high-power operation of 650 nm-band AlGaInP visible lasers with low optical absorption mirrors

High-power operation of 650 nm-band GaInP/AlGaInP strained quantum well visible laser diodes were successfully demonstrated by introducing a hydrogenated amorphous-Si film (/spl alpha/-Si:H) for high reflection mirror. The /spl alpha/-Si:H film has lower optical absorption coefficient than conventional hydrogen-free /spl alpha/-Si film. Therefore, heat generation at the rear facet of the laser was expected to be suppressed. Fundamental-transverse-mode operation at 30 mW of output power up to 100/spl deg/C and the maximum lasing temperature of 115/spl deg/C were obtained. These lasers have operated more than 1000 h at 60/spl deg/C under a constant output power of 30 mW without degradation.