DocumentCode :
3357842
Title :
High Spatial Resolution Mapping Of Defects In Direct And Indirect Gap Semiconductors
Author :
Carver, Gary E.
Author_Institution :
AT&T Bell Laboratories
fYear :
1990
fDate :
4-9 Nov 1990
Firstpage :
620
Lastpage :
623
Keywords :
Gallium arsenide; III-V semiconductor materials; Indium phosphide; Optical arrays; Optical materials; Passivation; Photoluminescence; Plasma applications; Plasma materials processing; Spatial resolution;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1990. LEOS '90. Conference Proceedings., IEEE
Print_ISBN :
0-87942-550-4
Type :
conf
DOI :
10.1109/LEOS.1990.690700
Filename :
690700
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3357842
