Title :
Plasmon-plasmon scattering in two-dimensional electron channel of a terahertz nanotransistor
Author :
Polischuk, Olga V. ; Popov, Viacheslav V. ; Knap, Woitek ; Fatimy, A. El
Author_Institution :
Inst. of Radio Eng. & Electron. (Saratov Div.), Russian Acad. of Sci., Saratov
fDate :
Sept. 29 2008-Oct. 4 2008
Abstract :
We calculate the terahertz absorption spectrum of the high-electron-mobility transistor with a short gate and long ungated channel regions and show that the main contribution to the linewidth of the gated plasmon resonance can be attributed to the plasmon-plasmon inter-mode scattering. The results allow to interpret recent experimental results of resonant THz detection by InGaAs nanotransistors. The physics of the plasmon-plasmon inter-mode scattering is discussed compared to the other possible plasmon damping mechanisms.
Keywords :
III-V semiconductors; gallium arsenide; high electron mobility transistors; indium compounds; nanoelectronics; plasmons; InGaAs; gated plasmon resonance; high-electron-mobility transistor; plasmon damping; plasmon-plasmon scattering; terahertz absorption spectrum; terahertz nanotransistor; two-dimensional electron channel; Absorption; Damping; Electrons; HEMTs; Indium gallium arsenide; MODFETs; Physics; Plasmons; Resonance; Scattering; field-effect transistors; plasmons; terahertz radiation; two-dimensional systems;
Conference_Titel :
Advanced Optoelectronics and Lasers, 2008. CAOL 2008. 4th International Conference on
Conference_Location :
Crimea
Print_ISBN :
978-1-4244-1973-9
Electronic_ISBN :
978-1-4244-1974-6
DOI :
10.1109/CAOL.2008.4671953
