Title :
First fabrication of AlGaAs/GaAs laser diodes with GaAs islands active regions on Si grown by droplet epitaxy
Author :
Egawa, T. ; Ogawa, A. ; Jimbo, T. ; Umeno, M.
Author_Institution :
Res. Center for Micro-Structure Devices, Nagoya Inst. of Technol., Japan
Abstract :
The AlGaAs/GaAs laser diodes with the self-formed GaAs islands active regions on Si substrates showed the I/sub th/ of 260 mA, the J/sub th/ of 5.4 kA/cm/sup 2/ and the lasing wavelength of 791 nm with the FWHM of 2.8 nm under pulsed condition at 300 K. The self-formed GaAs islands on Si grown by the droplet epitaxy exhibited a conical shape with heights of 8 nm and effective diameters of 300 nm. Compared with the conventional quantum well laser diode on Si, the self-formed laser diode on Si exhibited the improved reliability due to the reduction of the dislocation number in the active region.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; island structure; optical fabrication; semiconductor lasers; vapour phase epitaxial growth; 260 mA; 791 nm; AlGaAs-GaAs; AlGaAs/GaAs laser diode; Si; Si substrate; active region; dislocation number; droplet epitaxy; fabrication; reliability; self-formed GaAs islands; Annealing; Buffer layers; Diode lasers; Epitaxial growth; Gallium arsenide; Hydrogen; Light emitting diodes; Optical device fabrication; Photonic integrated circuits; Substrates;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.553615
