DocumentCode
3358003
Title
Structural and electrical characterization of films of La-modified Pb(ZrxTi1-x)O3 prepared by sol-gel technique
Author
Vijayaraghavan, M.C. ; Goel, T.C. ; Pillai, P.K.C. ; Mendiratta, R.G.
Author_Institution
Dept. of Phys., Indian Inst. of Technol., Delhi, India
fYear
1996
fDate
25-30 Sep 1996
Firstpage
891
Lastpage
896
Abstract
La modified Pb(ZrxTi1-x)O3 films of 8/65/35 composition were deposited by spin coating from a PLZT sol prepared by dissolving the corresponding precursors in methoxyethanol. As deposited films were amorphous. A thin film of PbTiO3 was deposited on the substrate prior to depositing PLZT films to enhance the crystallinity and tetragonal nature of the PLZT films. After multiple coating, these films were heat treated at different temperatures. While films fired at 400°C were still amorphous, crystallinity was achieved on firing the films at 600°C. Dielectric studies have been performed to understand the temperature and frequency dependence of dielectric permittivity and loss in these films. Results of ferroelectric studies are also reported. The crystalline films exhibit P-E hysteresis loops
Keywords
coating techniques; dielectric hysteresis; dielectric losses; ferroelectric thin films; heat treatment; lanthanum compounds; lead compounds; permittivity; piezoceramics; sol-gel processing; 400 C; 600 C; PLZT; PLZT thin film; PbLaZrO3TiO3; amorphous structure; crystallinity; dielectric loss; dielectric permittivity; ferroelectric hysteresis; firing; heat treatment; sol-gel synthesis; spin coating; Amorphous materials; Coatings; Crystallization; Dielectric losses; Dielectric substrates; Dielectric thin films; Ferroelectric films; Firing; Sputtering; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrets, 1996. (ISE 9), 9th International Symposium on
Conference_Location
Shanghai
Print_ISBN
0-7803-2695-4
Type
conf
DOI
10.1109/ISE.1996.578228
Filename
578228
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