DocumentCode
3358020
Title
Effects of dislocation walls on the performance of cadmium telluride X-ray detectors
Author
Buis, C. ; D´aillon, E. Gros ; Marrakchi, G. ; Lafford, T.A. ; Brambilla, A. ; Verger, L.
Author_Institution
Rech.. Technol., CEA-Leti, Grenoble, France
fYear
2011
fDate
23-29 Oct. 2011
Firstpage
4804
Lastpage
4808
Abstract
We investigate microstructural defects in a chlorine-doped cadmium telluride crystal (CdTe:Cl), to understand the relationship between defects and performance of CdTe-based radiation detectors. We produced a CdTe-based X-ray detector operating in integration mode. However, its response under irradiation shows the presence of non-uniformities in sensitivity and dark-current maps, which means heterogeneities in the charge carrier transport. Advanced characterization tools, such as Infrared (IR) transmission and reflection microscopy and diffraction topography, are used to bulk and surface investigations. A clear correlation is established between the distribution of linear defects, such as dislocations and sub-grain-boundaries, and localization of zones of maximum dark-current and photo-current in the sample.
Keywords
X-ray detection; cadmium compounds; chlorine; semiconductor counters; CdTe-based X-ray detector; CdTe-based radiation detectors; CdTe:Cl; cadmium telluride X-ray detectors; chlorine-doped cadmium telluride crystal; dark-current maps; dark-current zones; diffraction topography; dislocation walls effects; infrared transmission; integration mode; mierostruetural defects; photo-current zones; reflection microscopy; sub-grain-boundaries; Artificial neural networks; Atomic measurements; Cadmium; Diffraction; Microscopy; Reflection; Tellurium;
fLanguage
English
Publisher
ieee
Conference_Titel
Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2011 IEEE
Conference_Location
Valencia
ISSN
1082-3654
Print_ISBN
978-1-4673-0118-3
Type
conf
DOI
10.1109/NSSMIC.2011.6154718
Filename
6154718
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