DocumentCode
3358029
Title
GaAs p-i-n diodes for room temperature soft X-ray photon counting
Author
Ng, Jo Shien ; Vines, Peter ; Gomes, Rajiv B. ; Babazadeh, Nasser ; Lees, John E. ; David, John P R ; Tan, Chee Hing
Author_Institution
Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield, UK
fYear
2011
fDate
23-29 Oct. 2011
Firstpage
4809
Lastpage
4811
Abstract
A study of leakage currents and X-ray photon counting using GaAs p-i-n diodes is presented. Different fabrication techniques have been investigated, namely He implantation, partial wet etching and full wet etching. It was found that the partially etched diodes showed well-defined spectral peaks when exposed to a 55Fe radioisotope source and uniformly low leakage currents ideal for X-ray detector arrays.
Keywords
III-V semiconductors; X-ray detection; etching; gallium arsenide; leakage currents; p-i-n diodes; photon counting; semiconductor counters; GaAs; X-ray detector array; full wet etching; helium implantation; leakage current; p-i-n diode; partial wet etching; radioisotope source; room temperature soft X-ray photon counting; temperature 293 K to 298 K; Extraterrestrial measurements; Fabrication; Gallium arsenide; MOCVD; Radioactive materials; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2011 IEEE
Conference_Location
Valencia
ISSN
1082-3654
Print_ISBN
978-1-4673-0118-3
Type
conf
DOI
10.1109/NSSMIC.2011.6154719
Filename
6154719
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