Dynamic properties of InAs self-assembled quantum dots for spectral hole burning memory application

Author

Horiguchi, N. ; Futatsugi, T. ; Nakata, Y. ; Yokoyama, N.

Author_Institution

Fujitsu Labs. Ltd., Atsugi, Japan

fYear

1996

fDate

8-11 Dec. 1996

Firstpage

421

Lastpage

424

Abstract

In this paper we report the dynamic properties of InAs self-assembled quantum dots for spectral hole burning memory applications. We measured the time constant of electron transport between InAs self-assembled quantum dots and the n-GaAs substrate by making use of the frequency dependence of the CV signal due to the InAs dots. We obtained a time constant of 2.1 /spl mu/s from experiments. The experimental results are well explained by equivalent circuit calculations and the theoretically calculated CR time constant. The time constant is expected to reach the sub-picosecond range in samples with a 10 nm barrier thickness.

Keywords

III-V semiconductors; equivalent circuits; indium compounds; optical hole burning; semiconductor device models; semiconductor quantum dots; semiconductor storage; tunnelling; 10 nm; 2.1 mus; CV signal; GaAs; InAs; InAs dots; dynamic properties; electron transport; frequency dependence; n-GaAs substrate; self-assembled quantum dots; spectral hole burning memory application; time constant; Absorption; Assembly; Electrons; Energy states; Frequency dependence; Frequency measurement; Photoconductivity; Quantum dots; Read-write memory; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1996. IEDM '96., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-3393-4

Type

conf

DOI

10.1109/IEDM.1996.553617

Filename

553617