Dynamic properties of InAs self-assembled quantum dots for spectral hole burning memory application

In this paper we report the dynamic properties of InAs self-assembled quantum dots for spectral hole burning memory applications. We measured the time constant of electron transport between InAs self-assembled quantum dots and the n-GaAs substrate by making use of the frequency dependence of the CV signal due to the InAs dots. We obtained a time constant of 2.1 /spl mu/s from experiments. The experimental results are well explained by equivalent circuit calculations and the theoretically calculated CR time constant. The time constant is expected to reach the sub-picosecond range in samples with a 10 nm barrier thickness.