DocumentCode :
3358589
Title :
Twin shaping filter technique for signals compensation in CZT detectors grown by the Vertical Bridgman method
Author :
Auricchio, N. ; Caroli, E. ; Marchini, L. ; Schiavone, F. ; Basili, A. ; Zappettini, A.
Author_Institution :
INAF, IASF, Bologna, Italy
fYear :
2011
fDate :
23-29 Oct. 2011
Firstpage :
4642
Lastpage :
4645
Abstract :
CdTe/CdZnTe is a consolidated material to realize detectors for a large variety of applications, such as medical, industrial, and space research. An Italian collaboration, involving the CNR/IMEM and INAF/IASF institutes, was born some years ago with the aim to develop a national capability to produce CZT detectors starting from the material growth to the final detection device. Some important features of these detectors (pulse height, energy resolution, photopeak efficiency) are affected by the charge collection efficiency: the low mobility of the charge carriers (particularly the holes) and trapping/detrapping phenomena can degrade the CdTe/CZT detectors response, depending on the distance between the charge formation position and the collecting electrodes. Several efforts have been made to improve the detection efficiency as well as the energy resolution, using both the optimization of the electrode geometry (drift strip technique, coplanar-grid, small pixel effect) and pulse height compensation methods to overcome the hole trapping problem. We have studied a bi-parametric method that uses a twin pulse shaping active filter to analyze the same signal: one slaw, which is proportional to the energy of the photon, and one fast, which depends on the position of the interaction with respect to the collecting electrode. The experimental results obtained with the application of this bi-parametric technique on planar CZT detectors of good quality grown by the Vertical Bridgman method at CNR/IMEM are presented as a function of the bias voltage, photon energy and shaping time pairs.
Keywords :
crystal growth from melt; semiconductor counters; CNR-IMEM institute; CZT detector; CdTe detector; INAF-IASF institute; Italian collaboration; bi-parametric method; bias voltage; charge formation position; collecting electrodes; detrapping phenomena; electrode geometry optimization; final detection device; hole trapping problem; material growth; photon energy; shaping time pairs; twin shaping filter technique; vertical Bridgman method; Cathodes; Charge carrier processes; Geometry;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2011 IEEE
Conference_Location :
Valencia
ISSN :
1082-3654
Print_ISBN :
978-1-4673-0118-3
Type :
conf
DOI :
10.1109/NSSMIC.2011.6154750
Filename :
6154750
Link To Document :
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