Experimental observation of Coulomb staircase in asymmetric tunnel barrier system

Author

Matsumoto, Y. ; Hanajiri, T. ; Toyabe, T. ; Sugano, T.

Author_Institution

Dept. of Electr. & Electron. Eng., Toyo Univ., Saitama, Japan

fYear

1996

fDate

8-11 Dec. 1996

Firstpage

429

Lastpage

432

Abstract

The advantages of single electron devices with asymmetrical tunnel barriers (ATBs), proposed by the authors, over conventional single electron devices with symmetrical tunnel barriers (STBs) are discussed by referring to the features of ATBs and the results of computer simulation of the performance of tunnel-junction-load SET logic and turnstile devices. Experimental observation of a Coulomb staircase and asymmetrical tunnel characteristics in ATBs fabricated with GaAs/AlGaAs heterostructures are also reported.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; quantum interference devices; quantum interference phenomena; single electron transistors; tunnelling; Coulomb staircase; GaAs-Al/sub 0.3/Ga/sub 0.7/As; GaAs/AlGaAs heterostructures; asymmetric tunnel barrier system; asymmetrical tunnel characteristics; computer simulation; single electron devices; tunnel-junction-load SET logic; turnstile devices; Capacitance; Chemical engineering; Circuits; Computer science; Computer simulation; Single electron devices; Temperature; Thermal resistance; Tunneling; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1996. IEDM '96., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-3393-4

Type

conf

DOI

10.1109/IEDM.1996.553619

Filename

553619