Title :
Experimental observation of Coulomb staircase in asymmetric tunnel barrier system
Author :
Matsumoto, Y. ; Hanajiri, T. ; Toyabe, T. ; Sugano, T.
Author_Institution :
Dept. of Electr. & Electron. Eng., Toyo Univ., Saitama, Japan
Abstract :
The advantages of single electron devices with asymmetrical tunnel barriers (ATBs), proposed by the authors, over conventional single electron devices with symmetrical tunnel barriers (STBs) are discussed by referring to the features of ATBs and the results of computer simulation of the performance of tunnel-junction-load SET logic and turnstile devices. Experimental observation of a Coulomb staircase and asymmetrical tunnel characteristics in ATBs fabricated with GaAs/AlGaAs heterostructures are also reported.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; quantum interference devices; quantum interference phenomena; single electron transistors; tunnelling; Coulomb staircase; GaAs-Al/sub 0.3/Ga/sub 0.7/As; GaAs/AlGaAs heterostructures; asymmetric tunnel barrier system; asymmetrical tunnel characteristics; computer simulation; single electron devices; tunnel-junction-load SET logic; turnstile devices; Capacitance; Chemical engineering; Circuits; Computer science; Computer simulation; Single electron devices; Temperature; Thermal resistance; Tunneling; US Department of Transportation;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.553619
