DocumentCode
3358686
Title
[Front cover]
fYear
2008
fDate
18-18 April 2008
Abstract
The following topics are dealt with: mesoscale gyroscope fabrication; threshold voltage derivation; drain current; cylindrical MOSFET; integrated digital control scheme; fully integrated high frequency DC-DC power converter; low-voltage CMOS temperature sensor design; Schottky diode; static frequency divider; nanoindentation measurements; surface bump defect formation mechanism; and phosphorus doped polysilicon-silicon nitride film stack.
Keywords
CMOS integrated circuits; DC-DC power convertors; MOSFET; Schottky diodes; frequency dividers; gyroscopes; indentation; integrated circuit design; low-power electronics; nanoelectronics; semiconductor device models; silicon compounds; temperature sensors; Schottky diode; cylindrical MOSFET; drain current; fully integrated high frequency DC-DC power converter; integrated digital control scheme; low-voltage CMOS temperature sensor design; mesoscale gyroscope fabrication; nanoindentation measurements; phosphorus doped polysilicon-silicon nitride film stack; static frequency divider; surface bump defect formation mechanism; threshold voltage derivation;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics and Electron Devices, 2008. WMED 2008. IEEE Workshop on
Conference_Location
Boise, ID
Print_ISBN
978-1-4244-2343-9
Type
conf
DOI
10.1109/WMED.2008.4510640
Filename
4510640
Link To Document