Title :
Si nanocrystal MOSFET with silicon nitride tunnel insulator for high-rate random number generation
Author :
Ohba, R. ; Matsushita, D. ; Muraoka, K. ; Yasuda, S. ; Tanamoto, T. ; Uchida, K. ; Fujita, S.
Author_Institution :
Adv. LSI Technol. Lab., Toshiba Corp., Yokohama
Abstract :
It is shown that sub-0.1 μm Si nanocrystal bulk MOSFET with thin SiN tunnel insulator is a very strong random noise source used in high-rate small-size random number generation circuit, which is required for cryptograph application in mobile network security. A fast random number generation rate of 0.12 MHz is demonstrated using Si nanocrystal MOSFET and a simple small circuit. It is suggested that a small-size random number generator with MHz generation rate, which is applicable for almost all security uses in our computer society, is possible by Si nanocrystal MOSFET device design
Keywords :
MOSFET; cryptography; elemental semiconductors; mobile communication; nanoelectronics; nanostructured materials; random number generation; silicon; silicon compounds; telecommunication security; 0.1 micron; 0.12 MHz; Si; SiN; SiN tunnel insulator; mobile network security; nanocrystal MOSFET; random number generation circuit; random number generator; silicon nitride tunnel insulator; Application software; Circuit noise; Computer security; Cryptography; Insulation; MOSFET circuits; Nanocrystals; Noise generators; Random number generation; Silicon compounds;
Conference_Titel :
Emerging VLSI Technologies and Architectures, 2006. IEEE Computer Society Annual Symposium on
Conference_Location :
Karlsruhe
Print_ISBN :
0-7695-2533-4
DOI :
10.1109/ISVLSI.2006.83
