DocumentCode :
3358820
Title :
[Commentary]
Author :
MacWilliams, K.
Author_Institution :
Appl. Mater., VP & GM May dan Tech Center, Boise, ID
fYear :
2008
fDate :
18-18 April 2008
Abstract :
Summary form only given. Self-aligned double patterning (SADP) is a new technique that can enable the scaling of memory devices in the face of a serious lithography roadblock.is the primary double patterning approach for flash memory, developed in part by Applied Materials, that is gaining rapid momentum due to its superior pattern (line width) control and because it allows chip makers to use their existing, proven factory equipment. SADP is particularly suited to regular one-dimensional repeated patterns such as those of NAND-flash memory devices; it has already become the manufacturing strategy for designs below 35 nm.
Keywords :
NAND circuits; flash memories; lithography; nanopatterning; NAND-flash memory devices; lithography; memory device scaling; self-aligned double patterning; Design methodology; Electrical engineering; Industries; Lithography; Manufacturing; Materials; Production;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronics and Electron Devices, 2008. WMED 2008. IEEE Workshop on
Conference_Location :
Boise, ID
Print_ISBN :
978-1-4244-2343-9
Type :
conf
DOI :
10.1109/WMED.2008.4510649
Filename :
4510649
Link To Document :
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