Title :
Inductor-based ESD protection under CDM-like ESD stress conditions for RF applications
Author :
Thijs, S. ; Okushima, M. ; Borremans, J. ; Jansen, P. ; Linten, D. ; Scholz, M. ; Wambacq, P. ; Groeseneken, G.
Author_Institution :
Electr. Eng. Dept, Katholieke Univ. Leuven, Leuven
Abstract :
Charged device model (CDM) electrostatic discharge (ESD) stress is a major concern for inductor-based ESD protection strategies for RF circuits processed in advanced nano-CMOS technologies. The CDM robustness of such protection methodology is investigated in this paper based on very-fast transmission line pulse (VFTLP) measurements. Its applicability is discussed for future technologies and RF applications.
Keywords :
CMOS analogue integrated circuits; electrostatic discharge; inductors; radiofrequency integrated circuits; transmission lines; ESD stress conditions; RF circuits; advanced nanoCMOS technology; charged device model; electrostatic discharge; inductor-based ESD protection; very-fast transmission line pulse measurements; Distributed parameter circuits; Electrostatic discharge; Electrostatic measurements; Nanoscale devices; Protection; Pulse measurements; Radio frequency; Robustness; Stress; Transmission line measurements;
Conference_Titel :
Custom Integrated Circuits Conference, 2008. CICC 2008. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4244-2018-6
Electronic_ISBN :
978-1-4244-2019-3
DOI :
10.1109/CICC.2008.4672017
