Inductor-based ESD protection under CDM-like ESD stress conditions for RF applications

Author

Thijs, S. ; Okushima, M. ; Borremans, J. ; Jansen, P. ; Linten, D. ; Scholz, M. ; Wambacq, P. ; Groeseneken, G.

Author_Institution

Electr. Eng. Dept, Katholieke Univ. Leuven, Leuven

fYear

2008

fDate

21-24 Sept. 2008

Firstpage

49

Lastpage

52

Abstract

Charged device model (CDM) electrostatic discharge (ESD) stress is a major concern for inductor-based ESD protection strategies for RF circuits processed in advanced nano-CMOS technologies. The CDM robustness of such protection methodology is investigated in this paper based on very-fast transmission line pulse (VFTLP) measurements. Its applicability is discussed for future technologies and RF applications.

Keywords

CMOS analogue integrated circuits; electrostatic discharge; inductors; radiofrequency integrated circuits; transmission lines; ESD stress conditions; RF circuits; advanced nanoCMOS technology; charged device model; electrostatic discharge; inductor-based ESD protection; very-fast transmission line pulse measurements; Distributed parameter circuits; Electrostatic discharge; Electrostatic measurements; Nanoscale devices; Protection; Pulse measurements; Radio frequency; Robustness; Stress; Transmission line measurements;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference, 2008. CICC 2008. IEEE

Conference_Location

San Jose, CA

Print_ISBN

978-1-4244-2018-6

Electronic_ISBN

978-1-4244-2019-3

Type

conf

DOI

10.1109/CICC.2008.4672017

Filename

4672017