DocumentCode
3358911
Title
New nonvolatile FPGA concept using magnetic tunneling junction
Author
Bruchon, N. ; Torres, L. ; Sassatelli, G. ; Cambon, G.
Author_Institution
LIRMM, Montpellier
fYear
2006
fDate
2-3 March 2006
Abstract
This paper describes a real time reconfigurable (RTR) micro-FPGA using new non volatile memory. Magnetic tunneling junctions (MTJ) used in magnetic random access memories (MRAM) are compatible with classical CMOS processes. Moreover remanent property of such a memory could limit configuration time and power consumption required at each power up of the device. Each configuration memory point has to be readable independently from each other, which makes this approach radically different from the classical memory array one
Keywords
field programmable gate arrays; magnetic storage; magnetic tunnelling; random-access storage; reconfigurable architectures; remanence; CMOS process; magnetic random access memories; magnetic tunneling junction; memory array; nonvolatile FPGA; nonvolatile memory; real time reconfigurable microFPGA; remanent property; CMOS process; Energy consumption; Field programmable gate arrays; Magnetic fields; Magnetic separation; Magnetic tunneling; Nonvolatile memory; Random access memory; Shift registers; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Emerging VLSI Technologies and Architectures, 2006. IEEE Computer Society Annual Symposium on
Conference_Location
Karlsruhe
Print_ISBN
0-7695-2533-4
Type
conf
DOI
10.1109/ISVLSI.2006.68
Filename
1602451
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