• DocumentCode
    3358911
  • Title

    New nonvolatile FPGA concept using magnetic tunneling junction

  • Author

    Bruchon, N. ; Torres, L. ; Sassatelli, G. ; Cambon, G.

  • Author_Institution
    LIRMM, Montpellier
  • fYear
    2006
  • fDate
    2-3 March 2006
  • Abstract
    This paper describes a real time reconfigurable (RTR) micro-FPGA using new non volatile memory. Magnetic tunneling junctions (MTJ) used in magnetic random access memories (MRAM) are compatible with classical CMOS processes. Moreover remanent property of such a memory could limit configuration time and power consumption required at each power up of the device. Each configuration memory point has to be readable independently from each other, which makes this approach radically different from the classical memory array one
  • Keywords
    field programmable gate arrays; magnetic storage; magnetic tunnelling; random-access storage; reconfigurable architectures; remanence; CMOS process; magnetic random access memories; magnetic tunneling junction; memory array; nonvolatile FPGA; nonvolatile memory; real time reconfigurable microFPGA; remanent property; CMOS process; Energy consumption; Field programmable gate arrays; Magnetic fields; Magnetic separation; Magnetic tunneling; Nonvolatile memory; Random access memory; Shift registers; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Emerging VLSI Technologies and Architectures, 2006. IEEE Computer Society Annual Symposium on
  • Conference_Location
    Karlsruhe
  • Print_ISBN
    0-7695-2533-4
  • Type

    conf

  • DOI
    10.1109/ISVLSI.2006.68
  • Filename
    1602451