• DocumentCode
    3358928
  • Title

    Derivation of threshold voltage and drain current for cylindrical MOSFET and application to a recessed MOSFET

  • Author

    Ananthan, Venkat ; Yang, Rongsheng ; Mouli, Chandra

  • Author_Institution
    Process R&D Micron Technol. Boise, Boise
  • fYear
    2008
  • fDate
    18-18 April 2008
  • Firstpage
    9
  • Lastpage
    11
  • Abstract
    Threshold voltage and drive current for a cylindrical MOSFET have been rigorously derived for the first time. An approximate expression for these quantities is presented for the purpose of analytical calculations. The model has been verified against TCAD simulations. The characteristics of a recessed gate MOSFET is analysed using these models.
  • Keywords
    MOSFET; cylindrical MOSFET; drain current; drive current; recessed MOSFET; threshold voltage; Capacitance; Electrodes; Equations; MOSFET circuits; Research and development; Threshold voltage; cylindrical MOSFET; recessed gate MOSFET; threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics and Electron Devices, 2008. WMED 2008. IEEE Workshop on
  • Conference_Location
    Boise, ID
  • Print_ISBN
    978-1-4244-2343-9
  • Electronic_ISBN
    978-1-4244-2344-6
  • Type

    conf

  • DOI
    10.1109/WMED.2008.4510655
  • Filename
    4510655
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3358928