Title :
Derivation of threshold voltage and drain current for cylindrical MOSFET and application to a recessed MOSFET
Author :
Ananthan, Venkat ; Yang, Rongsheng ; Mouli, Chandra
Author_Institution :
Process R&D Micron Technol. Boise, Boise
Abstract :
Threshold voltage and drive current for a cylindrical MOSFET have been rigorously derived for the first time. An approximate expression for these quantities is presented for the purpose of analytical calculations. The model has been verified against TCAD simulations. The characteristics of a recessed gate MOSFET is analysed using these models.
Keywords :
MOSFET; cylindrical MOSFET; drain current; drive current; recessed MOSFET; threshold voltage; Capacitance; Electrodes; Equations; MOSFET circuits; Research and development; Threshold voltage; cylindrical MOSFET; recessed gate MOSFET; threshold voltage;
Conference_Titel :
Microelectronics and Electron Devices, 2008. WMED 2008. IEEE Workshop on
Conference_Location :
Boise, ID
Print_ISBN :
978-1-4244-2343-9
Electronic_ISBN :
978-1-4244-2344-6
DOI :
10.1109/WMED.2008.4510655
