Title :
Nanoindentation measurements of silicon nitride films deposited using hexachlorodisilane as the si icon precursor
Author :
Goodner, D.M. ; Wei, G. ; Markowitz, D. ; Zhuang, K.
Author_Institution :
Process R&D, Micron Technol., Inc., Boise, ID
Abstract :
The mechanical properties of silicon nitride deposited using hexachlorodisilane (HCD) as the silicon precursor have been studied using nanoindentation. The hardness, elastic modulus and fracture resistance were found to be significantly lower for HCD nitride films than they are for nitride films deposited using dichlorosilane (DCS) as the silicon precursor. The addition of carbon to HCD nitride films resulted in slight decreases in hardness, modulus and fracture resistance. The hardness, modulus and fracture resistance of carbon-doped HCD nitride can be increased by raising the deposition temperature, increasing the ammonia:HCD gas flow ratio and/or post- deposition annealing.
Keywords :
elastic moduli; fracture toughness; hardness; indentation; nanotechnology; silicon; thin films; HCD nitride films; dichlorosilane; elastic modulus; fracture resistance; hardness; hexachlorodisilane; mechanical properties; nanoindentation measurements; silicon nitride films; silicon precursor; Annealing; Chemistry; Distributed control; Fluid flow; Mechanical factors; Plasma temperature; Scanning electron microscopy; Semiconductor films; Silicon; Temperature distribution; hexachlorodisilane; mechanical properties; nanoindentation; silicon nitride;
Conference_Titel :
Microelectronics and Electron Devices, 2008. WMED 2008. IEEE Workshop on
Conference_Location :
Boise, ID
Print_ISBN :
978-1-4244-2343-9
Electronic_ISBN :
978-1-4244-2344-6
DOI :
10.1109/WMED.2008.4510659
