Title :
Mechanism of Surface Bump Defect Formation in Phosphorus Doped Polysilicon-Silicon Nitride Film Stack
Author :
Khandekar, Anish ; Surthi, Shyam ; Hou, Vincent ; Rana, Niraj ; Williams, Benjamin
Author_Institution :
Micron Technol., Inc., Boise
Abstract :
Formation of bump defect on the surface of silicon nitride film deposited on top of phosphorus doped amorphous silicon layer was studied. The bump defect formation was found to be caused by localized phosphorus segregation on polysilicon surface. Wet chemical treatment of silicon surface involving HF- H2O2 chemistries were found to reduce bump defect formation.
Keywords :
amorphous semiconductors; chemical vapour deposition; semiconductor technology; semiconductor thin films; surface morphology; HF-H2O2; SiN:P; amorphous silicon layer; phosphorus doped polysilicon-silicon nitride film stack; surface bump defect formation; wet chemical treatment; Amorphous materials; Chemical technology; Inspection; Rough surfaces; Scanning electron microscopy; Semiconductor films; Silicon; Surface morphology; Surface roughness; Surface treatment; TEM; phosphorus; polysilicon; surface defect;
Conference_Titel :
Microelectronics and Electron Devices, 2008. WMED 2008. IEEE Workshop on
Conference_Location :
Boise, ID
Print_ISBN :
978-1-4244-2343-9
Electronic_ISBN :
978-1-4244-2344-6
DOI :
10.1109/WMED.2008.4510660
