• DocumentCode
    3359046
  • Title

    Indium Composition Dependent Threshold Current Density In Strained InGaAs/AlGaAs Quantum Well Lasers

  • Author

    Sugimoto, M. ; Hamao, N. ; Nishi, K. ; Yokoyama, H.

  • Author_Institution
    NEC Corporation
  • fYear
    1990
  • fDate
    4-9 Nov 1990
  • Firstpage
    635
  • Lastpage
    636
  • Keywords
    Charge carrier lifetime; Current measurement; Electrons; Indium gallium arsenide; Laboratories; Molecular beam epitaxial growth; National electric code; Quantum well lasers; Radiative recombination; Threshold current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society Annual Meeting, 1990. LEOS '90. Conference Proceedings., IEEE
  • Print_ISBN
    0-87942-550-4
  • Type

    conf

  • DOI
    10.1109/LEOS.1990.690707
  • Filename
    690707
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3359046