Session 8 - Characterization and test methods for device variability in nanoscale technologies

With scaling of CMOS towards nano-scale technologies, device variability and reliability is emerging as a major challenge for circuit design in such technologies. Hence, accurate measurement and characterization of sources of device variations and reliability degradations is very critical for coming up with appropriate circuit design techniques to mitigate such device non-idealities, as well as to insure the device manufacturability and yield. This session presents cutting-edge papers on effective measurement methods for characterization of gate dielectric breakdown, threshold voltage variations, delay variations, and an effective testing of multi-core SOC under process variations.