Dependability analysis of nano-scale FinFET circuits

Author

Feng Wang ; Yuan Xie ; Bernstein, K. ; Yan Luo

Author_Institution

Dept. of Comput. Sci. Eng., Pennsylvania State Univ., University Park, PA

fYear

2006

fDate

2-3 March 2006

Abstract

FinFET technology has been proposed as a promising alternative for deep sub-micro bulk CMOS technology, because of its better scalability. Previous works have studied the performance or power advantages of FinFET circuits over bulk CMOS circuits. This paper provides the dependability analysis of FinFET circuits, studying the soft error vulnerability of FinFET circuits and the impact of process variation. Our experiments compare FinFET circuits against bulk CMOS circuits in both 32 nm and 45 nm technologies, showing that FinFET circuits have better dependability and scalability, which is indicated by better soft error immunity and less impact of process variation. It is concluded that FinFET-based circuit design is more robust than the bulk CMOS based circuit design

Keywords

CMOS integrated circuits; integrated circuit reliability; nanoelectronics; 32 nm; 45 nm; FinFET technology; FinFET-based circuit design; bulk CMOS circuits; deep submicron bulk CMOS technology; nanoscale FinFET circuits; process variation impact; soft error vulnerability; CMOS process; CMOS technology; Circuit analysis; Circuit synthesis; Computer science; FinFETs; Logic devices; Random access memory; Scalability; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Emerging VLSI Technologies and Architectures, 2006. IEEE Computer Society Annual Symposium on

Conference_Location

Karlsruhe

Print_ISBN

0-7695-2533-4

Type

conf

DOI

10.1109/ISVLSI.2006.35

Filename

1602471