Title :
New 1200 V MOSFET structure on SOI with SIPOS shielding layer
Author :
Funaki, Hideyuki ; Yamaguchi, Yoshihiro ; Hirayama, Keizo ; Nakagawa, Akio
Author_Institution :
Toshiba Corp., Kawasaki, Japan
Abstract :
In this paper, we have experimentally obtained, for the first time, 1200 V lateral diodes and MOSFETs on SOI. The SOI structure is characterized by a SIPOS layer inserted between the silicon layer and the buried oxide. It was found that the new SOI diode breakdown voltage is determined by the conventional bulk p-n junction theory and not by the resurf (reduced surface field) principle
Keywords :
buried layers; dielectric thin films; electric breakdown; p-n junctions; power MOSFET; power semiconductor diodes; semiconductor device testing; silicon-on-insulator; 1200 V; MOSFET structure; SIPOS layer; SIPOS shielding layer; SOI; SOI MOSFETs; SOI diode breakdown voltage; SOI structure; Si; Si-SiO2; bulk p-n junction theory; buried oxide; lateral diodes; reduced surface field principle; resurf principle; silicon layer; Breakdown voltage; Implants; Impurities; Laboratories; MOSFET circuits; Semiconductor devices; Semiconductor diodes; Silicon; Spirals; Wire;
Conference_Titel :
Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4752-8
DOI :
10.1109/ISPSD.1998.702621
