Frequency tunable silicon carbide resonators for MEMS above IC

Micro-electromechanical beam resonators and arrays are fabricated using a custom low-temperature (< 300degC) CMOS-compatible silicon carbide micro-fabrication process. A special feature of this process is that it allows the integration of heaters directly onto the MEMS devices, thus enabling resonant frequency tuning with constant insertion loss and considerable extension of the tuning range. Characteristics for different devices are measured with quality factors of Q ap 1000 and resonant frequencies of up to 21.8 MHz.