DocumentCode :
3359606
Title :
Pure logic CMOS based embedded Non-Volatile Random Access Memory for low power RFID application
Author :
Pan, Liyang ; Luo, Xian ; Yan, Yaru ; Ma, Jirong ; Wu, Dong ; Xu, Jun
Author_Institution :
Inst. of Microelectron. of Tsinghua Univ., Beijing
fYear :
2008
fDate :
21-24 Sept. 2008
Firstpage :
197
Lastpage :
200
Abstract :
Based on a novel two-dimension array architecture, a 1.8 V 0.44 mm2 1 Kbits embedded non-volatile random access memory (NVRAM) IP is developed with 0.18 mum standard logic CMOS process. Several high voltage solutions and circuits are proposed to improve the reliability and safety of the system. Furthermore, the power consumption for read and write operations are controlled under 312 muA and 88 muA respectively. The merits make it suitable for low power RFID application.
Keywords :
CMOS logic circuits; low-power electronics; radiofrequency identification; random-access storage; NVRAM; logic CMOS; low power RFID; nonvolatile random access memory; size 0.18 micron; voltage 1.8 V; CMOS logic circuits; CMOS process; Logic arrays; Nonvolatile memory; Power system reliability; Radiofrequency identification; Random access memory; Safety; Standards development; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Custom Integrated Circuits Conference, 2008. CICC 2008. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4244-2018-6
Electronic_ISBN :
978-1-4244-2019-3
Type :
conf
DOI :
10.1109/CICC.2008.4672057
Filename :
4672057
Link To Document :
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