• DocumentCode
    3359686
  • Title

    Device characteristics of a quasi-SOI power MOSFET

  • Author

    Matsumoto, Satoshi ; Ishiyama, Toshihiko ; Hiraoka, Yasushi ; Sakai, Tatsuo ; Yachi, Toshiaki ; Ito, Akio ; Arimoto, Yoshihiro

  • Author_Institution
    NTT, Tokyo, Japan
  • fYear
    1998
  • fDate
    3-6 Jun 1998
  • Firstpage
    29
  • Lastpage
    32
  • Abstract
    The device characteristics of a quasi-SOI power MOSFET were investigated to obtain its optimum device structure. Its short channel effect was larger than the conventional SOI power MOSFET. We analyzed this effect and found a way to suppress it
  • Keywords
    optimisation; power MOSFET; semiconductor device testing; silicon-on-insulator; SOI power MOSFET; Si-SiO2; device characteristics; optimum device structure; quasi-SOI power MOSFET; short channel effect; Bipolar transistors; Body regions; Laboratories; MOSFET circuits; Numerical simulation; Power MOSFET; Silicon; Substrates; Surface resistance; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on
  • Conference_Location
    Kyoto
  • ISSN
    1063-6854
  • Print_ISBN
    0-7803-4752-8
  • Type

    conf

  • DOI
    10.1109/ISPSD.1998.702622
  • Filename
    702622
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3359686