Title :
Compact modeling and simulation of PD-SOI MOSFETs: Current status and challenges
Author :
Goo, Jung-Suk ; Williams, Richard Q. ; Workman, Glenn O. ; Chen, Qiang ; Lee, Sungjae ; Nowak, Edward J.
Author_Institution :
Technol. Dev. Group, Adv. Micro Devices Inc., Sunnyvale, CA
Abstract :
This paper reviews the status and challenges of the modeling partially-depleted silicon-on-insulator transistors. Many challenges stem from the floating-body potential, which offers advantages in terms of performance and leakage, but presents complex electrical behavior. Circuit simulator considerations and the importance of model standardization are also highlighted.
Keywords :
MOSFET; silicon-on-insulator; PD-SOI MOSFET; circuit simulator; floating-body potential; partially-depleted silicon-on-insulator transistors; Calibration; Circuit simulation; Circuit topology; Contacts; Fitting; Impact ionization; MOSFETs; Numerical models; Semiconductor device modeling; Silicon on insulator technology;
Conference_Titel :
Custom Integrated Circuits Conference, 2008. CICC 2008. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4244-2018-6
Electronic_ISBN :
978-1-4244-2019-3
DOI :
10.1109/CICC.2008.4672074
