Stress Determination of Oxide Film Formed on Lanthanum Ion-Implanted Pure Nickel

This electronic document Isothermal oxidation kinetics of pure nickel and its lanthanum ion-implanted sample are studied at 900degC. Scanning electronic microscopy (SEM) and transmission electronic microscopy (TEM) are used to examine the surface morphology and microstructure of oxide films. Laser Raman spectrometer and X-ray diffraction spectrometer (XRD) are used to study the stress level in oxide films formed on La-free and La-implanted Ni. Secondary ion massive spectrum (SIMS) is used to examine Ni, O and La element distribution in depth in oxide films. Results show that La-implantation remarkably reduces the growing speed and grain size of MO film; Meanwhile it changes the oxide film growing mechanism from predominant cation outward diffusion to anion inward diffusion. The fine-grained La-containing NiO film can relieve part of internal stress via high temperature creeping, and results in heterogeneous stress distribution in depth. XRD and Raman testing results show the stress declination effect due to La-implantation, and discrepancy between the two testing results is analyzed regarding to the rare earth effect during the film growing process.