High turn-off current capability of parallel-connected 4.5 kV trench-IEGTs

Author

Ogura, Tsuneo ; Sugiyama, Koichi ; Hasegawa, Shigeru ; Matsuda, Hideo ; Ohashi, Hiromichi

Author_Institution

Toshiba Corp., Kawasaki, Japan

fYear

1998

fDate

3-6 Jun 1998

Firstpage

47

Lastpage

50

Abstract

The turn-off characteristics of parallel-connected 4.5 kV trench injection enhanced gate transistors (IEGTs) are discussed. The influence of the gate circuit parameters on turn-off current balance was examined in order to realize high turn-off current capability. It is concluded that the reduction of the gate parasitic inductance is important for uniform turn-off operation. At the optimum gate circuit condition, it is shown that the maximum turn-off current increases in proportion to the number of IEGT chips. As a result, a 1300 A turn-off current capability at T_j=100°C is realized using nine parallel-connected IEGT chips in an inductive load circuit and without a snubber circuit

Keywords

bipolar transistor circuits; electric current; inductance; insulated gate bipolar transistors; power bipolar transistors; semiconductor device testing; 100 C; 1300 A; 4.5 kV; IEGT chips; gate circuit parameters; gate parasitic inductance; inductive load circuit; maximum turn-off current; optimum gate circuit condition; parallel-connected IEGT chips; parallel-connected trench-IEGTs; snubber circuit; trench IEGTs; trench injection enhanced gate transistors; turn-off characteristics; turn-off current balance; turn-off current capability; uniform turn-off operation; Circuits; Inductance; Insulated gate bipolar transistors; Laboratories; Low voltage; Microelectronics; Parasitic capacitance; Semiconductor devices; Snubbers; Switching loss;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on

Conference_Location

Kyoto

ISSN

1063-6854

Print_ISBN

0-7803-4752-8

Type

conf

DOI

10.1109/ISPSD.1998.702626

Filename

702626