Improve the precision of the silicon pressure cell

Author

Sen, Xie

Author_Institution

Dept. of Electr. Eng., Shanghai Univ., China

fYear

1992

fDate

4-9 Oct. 1992

Firstpage

1655

Abstract

Methods used to improve the precision of silicon pressure-sensitive resistor pressure cells to meet the needs of mass production of high-precision digital pressure meters are discussed. The characteristics of the cell are influenced by temperature. Temperature drift and nonlinearity have been the major technical problems in manufacturing this kind of sensor. The author analyzes the reasons for temperature drift and introduces a simple but efficient external compensating circuit for mass production that can lessen the temperature drift and nonlinear error efficiently. The silicon pressure resistor sensor when temperature drift compensation was used and linearity was improved, the sensor had a precision of 0.05%, fully satisfying the design requirement of the high-precision pressure meter.<>

Keywords

computerised instrumentation; manufacturing processes; pressure measurement; pressure sensors; silicon; Si; compensation; computerised instrumentation; design; digital pressure meters; manufacture; mass production; nonlinear error; precision; pressure measurement; pressure sensors; resistor; temperature drift; Bridge circuits; Internal stresses; Manufacturing; Pressure measurement; Resistors; Sensor phenomena and characterization; Silicon; Temperature distribution; Temperature sensors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Society Annual Meeting, 1992., Conference Record of the 1992 IEEE

Conference_Location

Houston, TX, USA

Print_ISBN

0-7803-0635-X

Type

conf

DOI

10.1109/IAS.1992.244238

Filename

244238