DocumentCode :
3360338
Title :
Buried-heterostructure LnGaAs/GaAs/GaLnP Strained-layer Quantum-well Lasers Fabricated By Mass Transport
Author :
Liau, Z.L. ; Palmateer, S.C. ; Groves, S.H. ; Walpole, J.N.
Author_Institution :
Massachusetts Institute of Technology
fYear :
1990
fDate :
4-9 Nov 1990
Firstpage :
648
Lastpage :
649
Keywords :
Chemical lasers; Contact resistance; Degradation; Gallium arsenide; Indium gallium arsenide; Morphology; Petroleum; Power lasers; Quantum well lasers; Threshold current;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1990. LEOS '90. Conference Proceedings., IEEE
Print_ISBN :
0-87942-550-4
Type :
conf
DOI :
10.1109/LEOS.1990.690714
Filename :
690714
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3360338
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