Fabrication of a 300 V, high current (300 mA/output), smart-power IC using gate-controlled SCRs on bonded (BSOI) technology

Author

Gonzalez, F. ; Shekhar, V. ; Chia-Kung Chan ; Choy, B. ; Chen, N.

Author_Institution

Supertex Inc., Sunnyvale, CA, USA

fYear

1996

fDate

8-11 Dec. 1996

Firstpage

473

Lastpage

476

Abstract

This paper presents the results of the development of a High Voltage (>300 V), High Current (>300 mA), fast switching BSOI technology with trench isolation, using shorted-anode SCRs. A 40 channels IC driver using HV P and N channel SCRs, with CMOS logic, has been fabricated. This paper also demonstrates the feasibility of charging one output driver while the previous driver load is still being discharged. This is an improvement over existing technology. The recombination time of the SCRs has also been characterized.

Keywords

CMOS integrated circuits; MOS-controlled thyristors; driver circuits; flat panel displays; isolation technology; power integrated circuits; silicon-on-insulator; switching circuits; 300 V; 300 mA; 40 channels IC driver; CMOS logic; SCR recombination time; bonded technology; color flat panel displays; gate-controlled SCRs; high current smart-power IC; high voltage high current fast switching BSOI technology; output driver charging; shorted-anode SCRs; trench isolation; CMOS technology; Costs; Dielectric substrates; Diodes; Fabrication; Flat panel displays; Isolation technology; Plasma displays; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1996. IEDM '96., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-3393-4

Type

conf

DOI

10.1109/IEDM.1996.553629

Filename

553629