Title :
Fabrication of a 300 V, high current (300 mA/output), smart-power IC using gate-controlled SCRs on bonded (BSOI) technology
Author :
Gonzalez, F. ; Shekhar, V. ; Chia-Kung Chan ; Choy, B. ; Chen, N.
Author_Institution :
Supertex Inc., Sunnyvale, CA, USA
Abstract :
This paper presents the results of the development of a High Voltage (>300 V), High Current (>300 mA), fast switching BSOI technology with trench isolation, using shorted-anode SCRs. A 40 channels IC driver using HV P and N channel SCRs, with CMOS logic, has been fabricated. This paper also demonstrates the feasibility of charging one output driver while the previous driver load is still being discharged. This is an improvement over existing technology. The recombination time of the SCRs has also been characterized.
Keywords :
CMOS integrated circuits; MOS-controlled thyristors; driver circuits; flat panel displays; isolation technology; power integrated circuits; silicon-on-insulator; switching circuits; 300 V; 300 mA; 40 channels IC driver; CMOS logic; SCR recombination time; bonded technology; color flat panel displays; gate-controlled SCRs; high current smart-power IC; high voltage high current fast switching BSOI technology; output driver charging; shorted-anode SCRs; trench isolation; CMOS technology; Costs; Dielectric substrates; Diodes; Fabrication; Flat panel displays; Isolation technology; Plasma displays; Thyristors; Voltage;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.553629
