Title :
Will BiCMOS stay competitive for mmW applications ?
Author :
Garcia, Patrice ; Chantre, Alain ; Pruvost, Sébastien ; Chevalier, Pascal ; Nicolson, Sean T. ; Roy, David ; Voinigescu, Sorin P. ; Garnier, Christophe
Author_Institution :
STMicroelectronics, Crolles
Abstract :
This work summarizes upcoming millimeter wave and high speed applications which will benefit from advanced SiGe BiCMOS process. The performance of a 230 GHz fT 280 GHz fmax process is detailed and future improvements are discussed. Intrinsic transistor performance for millimeter wave design has been compared with that of advanced 65 nm Low-Power CMOS. To help process comparison, design examples are also given and circuit optimizations to reach optimum noise figure are discussed. Recent realizations at 24 GHz and 77 GHz in SiGe BiCMOS are presented, demonstrating state of the art results on both receivers.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; integrated circuit noise; millimetre wave integrated circuits; semiconductor materials; transistors; BiCMOS; SiGe; circuit optimizations; frequency 24 GHz; frequency 77 GHz; millimeter wave design; noise figure; transistor; Automotive engineering; Bandwidth; BiCMOS integrated circuits; Costs; Germanium silicon alloys; High definition video; Millimeter wave transistors; Radar applications; Silicon germanium; Ultra wideband radar;
Conference_Titel :
Custom Integrated Circuits Conference, 2008. CICC 2008. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4244-2018-6
Electronic_ISBN :
978-1-4244-2019-3
DOI :
10.1109/CICC.2008.4672102
