Title :
AlInGaAs/AlGaAs Strained Single-quantum-well Diode Lasers
Author :
Wang, C.A. ; Walpole, J.N. ; Missaggia, L.J. ; Choi, H.K. ; Donnelly, J.P.
Author_Institution :
Massachusetts Institute of Technology
Keywords :
Capacitive sensors; Degradation; Diode lasers; Erbium; Gallium arsenide; Quantum well lasers; Temperature; Threshold current; Virtual manufacturing;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1990. LEOS '90. Conference Proceedings., IEEE
Print_ISBN :
0-87942-550-4
DOI :
10.1109/LEOS.1990.690715
