DocumentCode

3360530

Title

AlInGaAs/AlGaAs Strained Single-quantum-well Diode Lasers

Author

Wang, C.A. ; Walpole, J.N. ; Missaggia, L.J. ; Choi, H.K. ; Donnelly, J.P.

Author_Institution

Massachusetts Institute of Technology

fYear

1990

fDate

4-9 Nov 1990

Firstpage

650

Lastpage

652

Keywords

Capacitive sensors; Degradation; Diode lasers; Erbium; Gallium arsenide; Quantum well lasers; Temperature; Threshold current; Virtual manufacturing;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1990. LEOS '90. Conference Proceedings., IEEE

Print_ISBN

0-87942-550-4

Type

conf

DOI

10.1109/LEOS.1990.690715

Filename

690715