Low-cost fully integrated BiCMOS transceiver for pulsed 24-GHz automotive radar sensors

Author

Moquillon, L. ; Garcia, P. ; Pruvost, S. ; Tual, S. Le ; Marchetti, M. ; Chabert, L. ; Bertholet, N. ; Scuderi, A. ; Scaccianoce, S. ; Serratore, A. ; Piazzese, N. ; Dehos, C. ; Morche, D.

Author_Institution

STMicroelectron., Crolles

fYear

2008

fDate

21-24 Sept. 2008

Firstpage

475

Lastpage

478

Abstract

This work presents the performance of a 24-GHz transceiver for automotive short-range radar. Complying with the pulsed radar sensor requirements, this single-chip is the first silicon realization with this high-level of integration. The single-chip results were obtained at 24 GHz using a standard 0.13 mum BiCMOS SiGe 170 GHz f_T featuring 1.7 V BVceo. This allows a receive path of 47 dB gain with 3 dB_DSB noise figure providing a dynamic range of 31 dB. In the transmission section, 1-ns pulses modulated at 24 GHz are also obtained using an RF switch, which is able to deliver a continuous wave output power of 0 dBm.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; road vehicle radar; semiconductor materials; transceivers; RF switch; automotive radar sensors; automotive short-range radar; frequency 170 GHz; frequency 24 GHz; fully integrated BiCMOS transceiver; noise figure; noise figure 47 dB; pulsed radar sensor; size 0.13 mum; Automotive engineering; BiCMOS integrated circuits; Gain; Germanium silicon alloys; Noise figure; Pulse modulation; Radar; Silicon germanium; Switches; Transceivers;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference, 2008. CICC 2008. IEEE

Conference_Location

San Jose, CA

Print_ISBN

978-1-4244-2018-6

Electronic_ISBN

978-1-4244-2019-3

Type

conf

DOI

10.1109/CICC.2008.4672124

Filename

4672124