Title :
A new adaptive resurf concept for 20 V LDMOS without breakdown voltage degradation at high current
Author :
Kinoshita, Kozo ; Kawaguchi, Yusuke ; Nakagawa, Akio
Author_Institution :
Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan
Abstract :
This paper presents a new adaptive resurf (reduced surface field) concept for 20 V LDMOS which introduces an additional resurf layer to the conventional resurf layer. The new resurf LDMOS achieves a sufficiently low on-resistance of 17.7 mΩ·mm2 and a high static breakdown voltage of 28.0 V without significant breakdown voltage degradation under large drain current flow conditions. The device on-state breakdown voltage for a 5 V gate voltage is 21.8 V
Keywords :
electric breakdown; electric fields; electric resistance; power MOSFET; semiconductor device reliability; semiconductor device testing; surface potential; 20 V; 21.8 V; 28 V; 5 V; LDMOSFET; Si; SiO2-Si; adaptive reduced surface field concept; adaptive resurf concept; breakdown voltage degradation; current; device on-state breakdown voltage; drain current flow conditions; gate voltage; on-resistance; resurf LDMOS; resurf layer; static breakdown voltage; Breakdown voltage; Current density; Degradation;
Conference_Titel :
Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4752-8
DOI :
10.1109/ISPSD.1998.702630
