Simulation Studies of Tunnel Field Effect Transistor (TFET)

Author

Aswathy, M. ; Biju, Nitha M. ; Komaragiri, Rama

Author_Institution

Dept. of ECE, Nat. Inst. of Technol., Calicut, India

fYear

2012

fDate

9-11 Aug. 2012

Firstpage

138

Lastpage

141

Abstract

TFET is proposed as an alternative to Metal Oxide Semiconductor Field Effect Transistor. In these devices, tunneling currents are no longer considered as unwanted parasitics. In this work, the device architecture and performance of both n-type and p-type TFETs with a channel length of 30nm are studied. Synopsis® device simulation tool MEDICI® is used to analyze the device performance. According to simulation results, the threshold voltage of n-type TFET and p-type TFET was initially obtained as 1.5V and -2V respectively using constant current method. Then using transconductance change method, two threshold voltages V_TG and V_TD were extracted from I_DS-V_GS and I_DS-V_DS graphs respectively. An excellent ON/OFF performance was also observed in simulation results.

Keywords

MOSFET; tunnel transistors; I-V graphs; MEDICI Synopsis device simulation tool; constant current method; metal oxide semiconductor field effect transistor; n-type TFET; p-type TFET; size 30 nm; transconductance change method; tunnel field effect transistor simulation; tunneling currents; two threshold voltages; voltage -2 V; voltage 1.5 V; Capacitance; FETs; Logic gates; MOSFET circuits; Substrates; Threshold voltage; Tunneling; Band-to-Band Tunneling (BTBT); Metal Oxide semicon-ductor Field Effect Transistor (MOSFET); N-type TFET (NTFET); P-type TFET (PTFET); Tunnel Field Effect Transistor (TFET);

fLanguage

English

Publisher

ieee

Conference_Titel

Advances in Computing and Communications (ICACC), 2012 International Conference on

Conference_Location

Cochin, Kerala

Print_ISBN

978-1-4673-1911-9

Type

conf

DOI

10.1109/ICACC.2012.31

Filename

6305573