Title :
VCSEL device modeling and parameter extraction technique
Author :
Minoglou, K. ; Halkias, G. ; Kyriakis-Bitzaros, E.D.
Author_Institution :
Inst. of Microelectron., Athens
Abstract :
An efficient model scheme that combines the non-linear behaviour of the input parasitics with the intrinsic fundamental device rate equations of the Vertical Cavity Surface Emitting Lasers (VCSELs) is proposed. The model parameter values are extracted using a fully defined systematic technique from dc current-optical power-voltage (I-L-V) and ac S11-S21 response measurements. Extraction and simulation procedures are implemented in commercial integrated circuit design tools. Investigation on their accuracy and efficiency is performed by comparing simulation results with the experimental measurements.
Keywords :
equivalent circuits; integrated optoelectronics; nonlinear optics; optimisation; semiconductor device models; semiconductor lasers; surface emitting lasers; AC S11-S21 response measurements; DC current-optical power-voltage measurements; VCSEL device modeling; equivalent circuit optimization methodology; input parasitics; integrated circuit design tools; intrinsic fundamental device rate equations; nonlinear behaviour; parameter extraction technique; vertical cavity surface emitting lasers; Circuit simulation; Current measurement; Integrated circuit measurements; Integrated circuit synthesis; Laser modes; Nonlinear equations; Parameter extraction; Power system modeling; Surface emitting lasers; Vertical cavity surface emitting lasers;
Conference_Titel :
Electronics, Circuits and Systems, 2007. ICECS 2007. 14th IEEE International Conference on
Conference_Location :
Marrakech
Print_ISBN :
978-1-4244-1377-5
Electronic_ISBN :
978-1-4244-1378-2
DOI :
10.1109/ICECS.2007.4510919
