Title :
SiP for GSM/EDGE in CMOS technology
Author :
Puma, G. Li ; Kristan, E. ; De Nicola, P. ; Vannier, C. ; Greyling, B. ; Piccolella, S.
Author_Institution :
Infineon Technol., Duisburg
Abstract :
The development in the field of RF and baseband (BB) integration in nanoscale CMOS technology for cellular systems over the last recent years has shown significant progress. The successful integration of the RF transceiver with digital baseband processor enables mobile phone manufacturer to build ultra-low cost phones for GSM/GPRS in CMOS technology. This trend towards continuous system integration for mobile phones with an advanced feature set providing high data rate communication, multimedia and camera capabilities. The support of various features requires a system solution including the power-management unit (PMU) with highly efficient DC-DC converters to reduce the overall power consumption. However, this imposes a major challenge for the integration of the RF due to crosstalk and thermal heating effects caused by the PMU and BB part.
Keywords :
CMOS integrated circuits; DC-DC power convertors; cellular radio; mobile handsets; system-in-package; transceivers; DC-DC converters; GSM/EDGE; RF transceiver; camera capability; cellular systems; data rate communication; digital baseband processor; mobile phone manufacturer; multimedia capability; nanoscale CMOS technology; power consumption; power-management unit; system in package; ultra-low cost phones; Baseband; CMOS technology; Costs; GSM; Ground penetrating radar; Manufacturing processes; Mobile handsets; Phasor measurement units; Radio frequency; Transceivers;
Conference_Titel :
Custom Integrated Circuits Conference, 2008. CICC 2008. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4244-2018-6
Electronic_ISBN :
978-1-4244-2019-3
DOI :
10.1109/CICC.2008.4672174
