Title :
FinFET technology for analog and RF circuits
Author :
Parvais, B. ; Subramanian, V. ; Mercha, A. ; Dehan, M. ; Wambacq, P. ; Sanssen, W. ; Groeseneken, G. ; Decoutere, S.
Author_Institution :
MEC, Leuven
Abstract :
FinFET technology presents a competitive alternative to planar CMOS as it features a better control of the short channel effects. This results in improved digital and analog performances. The radio-frequency (RF) behavior is however affected by a large level of parasitics. In this paper, we explain how technological options and device design affect the FinFET performance. In addition, the challenges and opportunities for both wideband modeling and the design of analog and RF circuits are identified and discussed.
Keywords :
MOSFET; analogue integrated circuits; integrated circuit design; radiofrequency integrated circuits; FinFET technology; analog circuit; device design; radio-frequency behavior; radio-frequency circuits; short channel effects; wideband modeling; CMOS technology; Capacitance; Circuits; Degradation; FinFETs; MOSFETs; Radio frequency; Silicon; Threshold voltage; Transconductance;
Conference_Titel :
Electronics, Circuits and Systems, 2007. ICECS 2007. 14th IEEE International Conference on
Conference_Location :
Marrakech
Print_ISBN :
978-1-4244-1377-5
Electronic_ISBN :
978-1-4244-1378-2
DOI :
10.1109/ICECS.2007.4510960
