Advances in Multi-Gate MOSFET Circuit Design

In this paper recent advances in Multi-Gate MOS-FET (MuGFET) circuit design are reported. The feasibility of essential parts of low-power mobile SoC applications and large scale integration capability is shown. Excellent short channel control enables undoped metal gate MuGFETs to outperfom their planar counterparts in terms of delay-leakage trade-off. Superior voltage scaling efficiency and competitive performance is demonstrated for a product typical critical path. Design and layout optimization for improved SRAM cell stability is shown. Beneficial analog performance is exemplary demonstrated for an OpAmp. A potential degradation of ADC performance due to transient VT mismatch is shown, the use of redundancy is proposed as countermeasure. Key RF building blocks are presented, MuGFET specific design issues are outlined. A comparison of different ESD elements yields a potential ESD protection scheme combining planar and MuGFET devices.