Title :
High-power mid-infrared semiconductor lasers
Author :
Choi, H.K. ; Turner, G.W. ; Le, H.Q.
Author_Institution :
Lincoln Lab., MIT, Lexington, MA, USA
Abstract :
Summary form only given. High-power mid-infrared semiconductor lasers emitting between 2 and 5 μm are desirable for military applications such as infrared countermeasures. At 2 μm, high cw power greater than 1 W has been obtained at room temperature for GaInAsSb-AlGaAsSb strained quantum-well diode lasers
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; infrared sources; laser beam applications; laser transitions; military equipment; quantum well lasers; 1 W; 2 to 5 mum; GaInAsSb-AlGaAsSb; GaInAsSb-AlGaAsSb strained quantum-well diode lasers; high cw power; high-power mid-infrared semiconductor lasers; infrared countermeasures; military applications; room temperature; Diode lasers; Electrons; Laboratories; Laser excitation; Molecular beam epitaxial growth; Power lasers; Quantum well lasers; Semiconductor lasers; Substrates; Temperature;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-3895-2
DOI :
10.1109/LEOS.1997.630563
