Design of bandgap voltage reference circuit with all TFT devices on glass substrate in a 3-μm LTPS process

Author

Lu, Ting-Chou ; Ker, Ming-Dou ; Zan, Hsiao-Wen ; Kuo, Chung-Hung ; Li, Chun-Huai ; Hsieh, Yao-Jen ; Liu, Chun-Ting

Author_Institution

Inst. of Electron., Nat. Chiao-Tung Univ., Hsinchu

fYear

2008

fDate

21-24 Sept. 2008

Firstpage

721

Lastpage

724

Abstract

A bandgap voltage reference (BGR) circuit designed with the low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) on glass substrate is proposed, which has been successfully verified in a 3-mum LTPS process. The experimental results have shown that the measured temperature coefficient of the new proposed bandgap voltage reference circuit is around 195 ppm/degC under the supply voltage of 10 V. The proposed bandgap voltage reference circuit can be applied on precise analog circuits for System-on-Panel (SoP) or System-on-Glass (SoG) applications.

Keywords

elemental semiconductors; reference circuits; silicon; thin film transistors; LTPS TFT devices; bandgap voltage reference circuit; glass substrate; low-temperature polycrystalline silicon thin-film transistors; precise analog circuits; system-on-glass; system-on-panel; temperature coefficient; voltage 10 V; CMOS technology; Circuits; Diodes; Glass; MOSFETs; Photonic band gap; Substrates; Temperature sensors; Thin film transistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference, 2008. CICC 2008. IEEE

Conference_Location

San Jose, CA

Print_ISBN

978-1-4244-2018-6

Electronic_ISBN

978-1-4244-2019-3

Type

conf

DOI

10.1109/CICC.2008.4672188

Filename

4672188