Deep submicron effects on data converter building blocks

Physical effects in deep submicron processes can affect reliability, performance, and even functionality in common circuit building blocks used in data converters. NBTI (Negative Bias Temperature Instability), STI (Shallow Trench Isolation) stress, and NWELL proximity effects will be reviewed and examples are given of circuit topologies and layout practices which can minimize the detrimental aspects these effects on commonly used blocks such as comparators, op-amps, and high speed flip-flops.