Title :
Deep submicron effects on data converter building blocks
Author :
Evans, W.P. ; Burnell, D.
Author_Institution :
Cadence Design Syst., Columbia, MD
Abstract :
Physical effects in deep submicron processes can affect reliability, performance, and even functionality in common circuit building blocks used in data converters. NBTI (Negative Bias Temperature Instability), STI (Shallow Trench Isolation) stress, and NWELL proximity effects will be reviewed and examples are given of circuit topologies and layout practices which can minimize the detrimental aspects these effects on commonly used blocks such as comparators, op-amps, and high speed flip-flops.
Keywords :
comparators (circuits); convertors; flip-flops; integrated circuit design; integrated circuit reliability; network topology; operational amplifiers; circuit layout practices; circuit topologies; comparators; data converter building blocks; deep submicron processes; high speed flip-flops; negative bias temperature instability; op-amps; shallow trench isolation; Circuits; Latches; MOS devices; MOSFETs; Negative bias temperature instability; Niobium compounds; Pipelines; SPICE; Stress; Titanium compounds;
Conference_Titel :
Custom Integrated Circuits Conference, 2008. CICC 2008. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4244-2018-6
Electronic_ISBN :
978-1-4244-2019-3
DOI :
10.1109/CICC.2008.4672189
